KDP620UL_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PIN TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications.
FEATURES
hArray type (6 Diode in one package)
hLow Capacitance
hLow Series resistance
KDP620UL
SILICON EPITAXIAL PIN TYPE DIODE
A
TOP VIEW
D
1
6
12
7
C
BOTTOM VIEW
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
I_F
T_j
T_stg
RATING
30
100
150
-55q150
UNIT
V
mA


EQUTVALENT CIRCUIT (TOP VIEW)
12
7
D6
D5
D4
D1
D2
D3
1
6
SIDE VIEW
DIM MILLIMETERS
A
2.50 +_ 0.05
B
1.20 +_ 0.05
C
0.20 +_ 0.05
D
0.40 +_ 0.05
E
0.25 +_ 0.05
F
0.45 +_ 0.05
G
Max 0.5
ULP-12
Marking
Type Name
P0
Lot No.
D1,D2, D5, D6 ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Forward Voltage
Total Capacitance
Series Resistance
ESD-Capability *
I_R
V_R=30V
V_F
I_F=10mA
C_T
V_R=1V, f=1MHz
r_s
I_F=10mA, f=100MHz
C=200pF, R=0ʃ,
-
Both forward and reverse
direction 1 pulse
* Failure cirterion : I_R>100nA at V_R=30V.
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
0.1
1.0
0.30
1.3
UNIT
ǺA
V
pF
ʃ
100
-
-
V
2008. 1. 22
Revision No : 0
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