KDP610UL Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PIN TYPE DIODE

SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications.
FEATURES
Array type (4 Diode in one package)
Low Capacitance
Low Series resistance
KDP610UL
SILICON EPITAXIAL PIN TYPE DIODE
TENTATIVE
A
D
1
4
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
I_F
T_j
T_stg
RATING
30
100
150
-55 150
UNIT
V
mA
TOP VIEW
SIDE VIEW
8
C⁵
BOTTOM VIEW
DIM MILLIMETERS
A
1.80 +_ 0.05
B
1.20 +_ 0.05
C
0.20 +_ 0.05
D
0.40 +_ 0.05
E
0.25 +_ 0.05
F
0.45 +_ 0.05
G
Max 0.5
ULP-8
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
I_R
Forward Voltage
V_F
Total Capacitance
C_T
Series Resistance
r_s
ESD-Capability *
-
* Failure cirterion : I_R>100nA at V_R=30V.
TEST CONDITION
V_R=30V
I_F=10mA
V_R=1V, f=1MHz
I_F=10mA, f=100MHz
C=200pF, R=0 ,
Both forward and reverse
direction 1 pulse
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
0.1
1.0
0.30
1.3
UNIT
A
V
pF
100
-
-
2008. 1. 22
Revision No : 0
1/2