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K3519PQ-XH Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
SEMICONDUCTOR
TECHNICAL DATA
General Description
The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a
bi-directional load switch, facilitated by its common-drain configuration.
K3519PQ-XH
Common-Drain Dual N-Channel
Enhancement Mode Field Effect Transistor
2000
FEATURES
Low on-state resistance
RDS(ON)1 = 16m
RDS(ON)2 = 17m
RDS(ON)3 = 20m
MAX (VGS=4.5V, IS=1.0A)
MAX (VGS=3.9V, IS=1.0A)
MAX (VGS=3.5V, IS=1.0A)
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
24
VGSS
12
Storage Temperature Range
Tstg
-55 150
UNIT
V
V
S1
S2
G1
BOTTOM : COMMON DRAIN
G2
180 +_10
Equivalent Circuit
D
D
Rg
G1
S1
Rg
G2
S2
2010. 4. 29
Revision No : 0
1/3