F1B2CCI_07 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
Average Output Rectified Current : I_O=10A(Tc=101 ).
Repetitive Peak Reverse Voltage : V_RRM=200V.
Rectifier Stack of Single Phase Center Tap Type.
POLARITY
CC TYPE
CATHODE COMMON
1
3
CA TYPE
ANODE COMMON
1
3
2
2
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Repetitive Peak
F1B2CCI
Reverse Voltage
F1B2CAI
Average Output Rectified
Current (Tc=101 ) (Fig.)
V_RRM
I_O
Peak One Cycle Surge Forward
I_FSM
Current (Non-Repetitive)
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
200
10
60 (50Hz)
70 (60Hz)
-40 150
-40 150
UNIT
V
A
A
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
CC TYPE
1. ANODE
2. CATHODE COM
3. ANODE
CA TYPE
1. CATHODE
2. ANODE COM
3. CATHODE
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage (Note)
V_FM
Repetitive Peak Reverse Current (Note)
I_RRM
Reverse Recovery Time
t_rr
Thermal Resistance
Note : A Value of one cell.
R_th(j-c)
TEST CONDITION
I_FM=5A
V_RRM=Rated
I_F=0.1A, I_R=0.1A
Junction to Case
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.4
10
400
3.5
UNIT
V
A
nS
/W
Fig. EXAMPLE OF RECTIFING CIRCUIT
I _O =10A
LOAD
RECTIFIER STACK
2007. 5. 21
Revision No : 1
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