E65A21VBS Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
E65A21VBS, E65A21VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=65A.
hZener Voltage : 21V(Typ.)
POLARITY
E65A21VBS (+ Type)
E65A21VBR (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
I_F(AV)
I_FSM
Non-Repetitive Peak
Reverse Surge Current (10mS)
I_RSM
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
V_RSM
V_RM
T_j
Storage Temperature Range
T_stg
RATING
65
450 (60Hz)
65
19
16
-40q215
-40q215
UNIT
A
A
A
V
V


A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4 +_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Zener Voltage
V_Z
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Reverse Leakage Current Under
High Temperature
I_R
ǚV_F
V_br
HI_R
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=20V
I_FM=100A, I_M=100mA, Pw=100mS
I_rsm=65A, Pw=10mS
Ta=150, V_R=20V
DC total junction to case
MIN.
-
19
-
-
-
-
-
TYP.
-
21
-
-
-
-
-
MAX.
1.05
23
0.3
50
34
UNIT
V
V
ǺA
mV
V
100
ǺA
0.5
/W
2004. 3. 11
Revision No : 0
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