E50A37VBS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
E50A37VBS, E50A37VBR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=50A.
hZener Voltage : 37V(Typ.)
POLARITY
E50A37VBS (+ Type)
E50A37VBR (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
I_F(AV)
I_FSM
I_RSM
Transient Peak Reverse
Voltage
V_RSM
Peak Reverse Voltage
V_RM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
50
300 (60Hz)
50
34
32
-40q215
-40q215
UNIT
A
A
A
V
V


A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Zener Voltage
V_Z
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
I_R
ǚV_F
V_br
ǯ_T
HI_R
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=32V
I_FM=100A, I_M=100mA, Pw=100mS
I_rsm=50A, Pw=10mS
I_Z=10mA
Ta=150, V_R=32V
DC total junction to case
MIN.
-
34
-
-
-
-
-
-
TYP.
-
37
-
-
-
27
-
-
MAX.
1.10
40
10
60
55
-
UNIT
V
V
ǺA
mV
V
mV/
100
ǺA
0.6
/W
2002. 1. 30
Revision No : 1
1/1