E50A2CPS Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=50A.
hReverse Voltage : 200V(Min.)
POLARITY
E50A2CPS (+ Type)
E50A2CPR (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
I_F(AV)
I_FSM
Repetitive Peak Reverse Voltage
V_RRM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
50
500 (60Hz)
200
-40q200
-40q200
UNIT
A
A
V


E50A2CPS, E50A2CPR
STACK SILICON DIFFUSED DIODE
D
F2
E
F1
A
DIM MILLIMETERS DIM MILLIMETERS
A Φ11.7+0.1/-0 F1
0.32
B 3.85+0/-0.2 F2
3.1
D
Φ1.45+_ 0.1
G
0.5
E
1.55
L1 8.4 MAX
DIM TYPE POLARITY
L2 ^S
R
MILLIMETERS
17.5+0/-1.5
21.5+0/-1.5
H-PF
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Voltage
V_R
Reverse Current
I_R
Transient Thermal Resistance
V_F
Reverse Recovery Time
t_rr
Reverse Leakage Current Under
HI_R
High Temperature
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_R=5mA
V_R=200V
I_FM=100A, I_M=100mA,
Pw=100ms
I_F=100mA, I_RP=100mA
Ta=150, V_R=200V
Junction to Base
Junction to Fin
MIN.
-
200
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
1.05
-
50
UNIT
V
V
ǺA
130
mV
15
Ǻs
2.5
mA
0.8
/W
1.0
2005. 3. 7
Revision No : 0
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