E50A2CBS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=50A.
hRepetive Peak Reverse Voltage : V_RRM=200V
POLARITY
E50A2CBS E50A2CBR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
I_F(AV)
I_FSM
V_RRM
T_j
T_stg
RATING
50
380 (60Hz)
200
-40q215
-40q215
UNIT
A
A
V


E50A2CBS, E50A2CBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Voltage
Reverse Current
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Reverse Recovery Time
Temperature Resistance
V_F
V_R
I_R
ǚV_F
HI_R
t_rr
R_th
TEST CONDITION
I_FM=100A
I_R=5mA
V_R=200V
I_FM=100A, I_M=100mA, Pw=100ms
Ta=150, V_R=200V
I_F=100mA, I_R=100mA
DC total Junction to case
MIN.
-
200
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
MAX.
1.05
-
50
80
UNIT
V
V
ǺA
mV
2.5
mA
15
Ǻs
0.6
/W
2002. 4. 9
Revision No : 2
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