E35A2CR_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I_O=35A.
Repetitive Peak Reverse Voltage : V_RRM=200V.
POLARITY
E35A2CS (+ Type)
E35A2CR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
I_F(AV)
I_FSM
T_j
T_stg
RATING
200
35
450 (50Hz)
-40 150
-40 150
UNIT
V
A
A
E35A2CS, E35A2CR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
E
F
G
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6 +_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Repetitive Peak Reverse Current
I_RRM
Reverse Recovery Time
t_rr
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
V_RRM=200V
I_F=0.1A, I_R=0.1A
DC total junction to case
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.05
50
15
1.0
UNIT
V
A
S
/W
2002. 10. 9
Revision No : 2
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