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E35A2CDS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : IO=35A.
hReverse Voltage : 200V(Min)
POLARITY
E35A2CDS E35A2CDR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
IF(AV)
IFSM
VRRM
Tj
Tstg
RATING
35
350 (60Hz)
200
-40q200
-40q200
UNIT
A
A
V


E35A2CDS, E35A2CDR
STACK SILICON DIFFUSED DIODE
F
E
G
B
A
DIM MILLIMETERS DIM MILLIMETERS
A
9.5+_ 0.2
E
3.1+_ 0.1
B
8.4+_ 0.2
F
Φ1.5
C
1.2
D
1
G
R0.5
L1
5+_ 0.4
DIM TYPE POLARITY
L2 S
R
MILLIMETERS
19.0+_ 1.0
23.0+_ 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Forward Voltage
Reverse Voltage
Reverse Current
Reverse Recovery Time
Reverse Leakage Current Under
High Temperature
VF
IFM=100A
VR
IR=5mA
IR
VR=200V
trr
IF=0.1A, IR=0.1A
HIR
Ta=150, VR=200v
Temperature Resistance
Rth
DC total Junction to case
MIN.
-
200
-
-
-
-
TYP.
-
-
-
-
-
0.8
MAX.
1.05
-
50
15
UNIT
V
V
ǺA
ǺS
2.5
mA
-
/W
2002. 10. 9
Revision No : 1
1/1