E35A27VBS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I_O=35A.
Zener Voltage : 27V(Typ.)
POLARITY
E35A27VBS (+ Type)
E35A27VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current
(10mS)
I_F(AV)
I_FSM
I_RSM
Transient Peak Reverse
Voltage
V_RSM
Peak Reverse Voltage
V_RM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
35
300 (60Hz)
42
22
20
-40 215
-40 215
UNIT
A
A
A
V
V
E35A27VBS, E35A27VBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Zener Voltage
V_Z
Reverse Current
I_R
Transient Thermal Resistance
V_F
Breakdown Voltage
V_br
Temperature Coefficient
T
Reverse Leakage Current Under
High Temperature
HI_R
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=20V
I_FM=100A, I_M=100mA, Pw=100mS
I_rsm=42A, Pw=10mS
I_Z=10mA
Ta=150 , V_R=20V
DC total junction to case
MIN.
-
24
-
-
-
-
-
-
TYP.
-
27
-
-
-
15.7
-
-
MAX.
1.10
29
0.2
70
34
-
UNIT
V
V
A
mV
V
mV/
100
A
0.8
/W
2002. 4. 16
Revision No : 4
1/1