E35A23VS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I_O=35A.
Zener Voltage : 23V(Typ.)
POLARITY
E35A23VS E35A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Peak Reverse Surge Current
(I_RSM/2=10ms)
Peak Revese Over Voltage
Peak Revese Voltage
Junction Temperature
I_F(AV)
I_FSM
I_RSM
V_RSM
V_RM
T_j
Storage Temperature Range
T_stg
RATING
35
450 (50Hz)
70
70
17
-40 200
-40 150
UNIT
A
A
A
V
V
E35A23VS, E35A23VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
E
F
G
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Zener Voltage
V_Z
Repetitive Peak Reverse Current
I_RRM
Transient Thermal Resistance
V_F
Reverse Leakage Current Under
High Temperature
HI_R
Temperature Resistance
Rth
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=V_RM
I_FM=100A
Ta=150 , V_R=V_RM
DC total junction to case
MIN.
-
20
-
-
-
-
TYP.
-
23
-
-
-
-
MAX.
1.05
26
10
90
UNIT
V
V
A
mV
2.5
mA
1.0
/W
2009. 12. 15
Revision No : 1
1/1