E35A23VR Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : I_O=35A.
ᴌZener Voltage : 23V(Typ.)
POLARITY
E35A23VS E35A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Peak Reverse Surge Current
(I_RSM/2=10ms)
Peak Revese Over Voltage
Peak Revese Voltage
Junction Temperature
I_F(AV)
I_FSM
I_RSM
V_RSM
V_RM
T_j
Storage Temperature Range
T_stg
RATING
35
450 (50Hz)
70
70
17
-40ᴕ200
-40ᴕ150
UNIT
A
A
A
V
V
á´±
á´±
E35A23VS, E35A23VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
E
F
G
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Zener Voltage
V_Z
Repetitive Peak Reverse Curren
I_RRM
Transient Thermal Resistance
I_RRM
Reverse Leakage Current Under
High Temperature
HI_R
Reverse recovery Time
Trr
Temperature Resistance
Thermal runway Temperature
Temperature Coefficient
Rth
Trwy
ề_T
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=V_RM
I_FM=100A, Pw=100mS
Ta=150á´±, V_R=V_RM
I_F=100mA, -I_R=100mA
90% Recovery Point
DC total junction to case
V_R=17V, I_R=5mA
I_R=10mA
MIN.
-
20
-
-
-
TYP.
-
23
-
-
-
MAX.
1.05
26
10
90
2.5
UNIT
V
V
ỌA
mV
mA
-
-
-
-
200
-
-
18
5.0
ỌS
1.0
á´±/W
-
á´±
-
mV/á´±
2001. 2. 8
Revision No : 0
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