E35A23VDS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
E35A23VDS, E35A23VDR
STACK SILICON DIFFUSED DIODE
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=35A.
hZener Voltage : 23V(Typ.)
POLARITY
E35A23VDS (+ Type)
E35A23VDR (- Type)
F
E
G
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
I_F(AV)
I_FSM
V_RRM
T_j
35
350
(10ms Condition)
17
-40q200
Storage Temperature Range
T_stg
-40q200
UNIT
A
A
V


B
A
DIM MILLIMETERS DIM MILLIMETERS
A
9.5+_ 0.2
E
3.1+_ 0.1
B
8.4+_ 0.2
F
Φ1.5
C
1.2
D
1
G
R0.5
L1
5+_ 0.4
DIM TYPE POLARITY
L2 ^S
R
MILLIMETERS
19.0+_ 1.0
23.0+_ 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Reverse Voltage
Repetitive Peak Reverse Current
Zener Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
V_FM
V_Z
I_RRM
ǯ_T
HI_R
I_FM=100A
I_R=10mA
V_R=17V
I_Z=10mA
Ta=150, V_R=V_RM
Temperature Resistance
R_th
Junction to case
MIN.
-
20
-
-
TYP.
-
23
-
0.077
MAX.
1.15
26
10
-
UNIT
V
V
ǺA
%/
-
-
2.5
mA
-
0.8
-
/W
2000. 7. 11
Revision No : 0
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