E35A23VDS Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : I_O=35A.
ᴌZener Voltage : 23V(Typ.)
POLARITY
E35A23VDS (+ Type)
E35A23VDR (- Type)
E35A23VDS, E35A23VDR
STACK SILICON DIFFUSED DIODE
F
E
G
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
RATING
Average Forward Current
Peak 1 Cycle Surge Current
I_F(AV)
I_FSM
35
350
(10ms Condition)
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
V_RRM
T_j
T_stg
17
-40ᴕ200
-40ᴕ200
UNIT
A
A
V
á´±
á´±
B
A
DIM
A
B
C
D
MILLIMETERS
9.5+_ 0.2
8.4+_ 0.2
1.2
1
DIM
E
F
G
L1
MILLIMETERS
3.1+_ 0.1
Φ1.5
R0.5
5+_ 0.4
DIM TYPE POLARITY
L2 ^S
R
MILLIMETERS
19.0+_ 1.0
23.0+_ 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Reverse Voltage
V_Z
Repetitive Peak Reverse Current
I_RRM
Zener Voltage
Temperature Coefficient
ề_T
Reverse Leakage Current Under
High Temperature
HI_R
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_R=10mA
V_R=17V
I_Z=10mA
Ta=150á´±, V_R=V_RM
Junction to case
MIN.
-
20
-
-
TYP.
-
23
-
0.077
MAX.
1.15
26
10
-
UNIT
V
V
ỌA
%/á´±
-
-
2.5
mA
-
0.8
-
á´±/W
2000. 7. 11
Revision No : 0
1/1