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E30A2CPS Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
ᴌAverage Forward Current : IO=30A.
ᴌReverse Voltage : 200V(Min.)
POLARITY
E30A2CPS (+ Type)
E30A2CPR (- Type)
E30A2CPS, E30A2CPR
STACK SILICON DIFFUSED DIODE
D
F2
E
F1
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Repetitive Peak
Reverse Voltage
VRRM
Non-Repetitive Peak
Reverse Voltage
PRM
Average Forward Current
IF(AV)
Peak 1 Cycle Surge Current
IFSM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
200
1.35
(Pulse duration 30ỌS
Non-repetitive)
30
350
(10mS Condition
Half sine wave 1 cycle)
-40ᴕ200
-40ᴕ200
UNIT
V
kW
A
A
á´±
á´±
A
DIM MILLIMETERS DIM MILLIMETERS
A Φ11.7+0.1/-0 F1
0.32
B 3.85+0/-0.2
F2
3.1
D
Φ1.45+_ 0.1
G
0.5
E
1.55
L1
8.4 MAX
DIM TYPE POLARITY
L2 S
R
MILLIMETERS
17.5+0/-1.5
21.5+0/-1.5
PF
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
VFM
Reverse Voltage
VRM
Repetitive Peak Reverse Current
IRRM
Reverse Recovery Time
trr
Transient Thermal Resistance
ẤVF
Reverse Leakage Current Under
High Temperature
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IR=5mA
VR=200V
IF=-IR 100mA
IFM=100A, Im=100mA,
Pt=100mS
Ta=150á´±, VR=VRM
Junction to Case
Junction to Fin
MIN.
-
200
-
-
-
TYP.
-
-
-
-
-
MAX.
1.17
-
50
15
140
UNIT
V
V
ỌA
ỌS
mV
-
-
2.5
mA
-
0.86
0.86
á´±/W
-
1.07
1.07
1998. 2. 19
Revision No : 0
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