E30A27VR_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=30A.
POLARITY
E30A27VS E30A27VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
DC Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Reverse 1 Cycle
Surge Current
V_DC
I_F(AV)
I_FSM
I_RSM
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
24
30
250 (50Hz)
50
-40q150
-40q150
UNIT
V
A
A
A


E30A27VS, E30A27VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
E
F
G
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Zener Voltage
V_Z
Peak Forward Voltage
V_FM
Repetitive Peak Reverse Current
I_RRM
Zener Voltage
r_Z
Temperature Coefficient
Reverse Recovery Time
t_rr
Temperature Resistance
R_th
TEST CONDITION
I_Z=10mA
I_FM=100A
V_RRM=24V
I_Z=10mA
I_F=0.1A, I_R=0.1A
DC total junction to case
MIN.
24
-
-
23
-
-
TYP.
-
-
-
-
-
-
MAX.
30
1.2
50
36
15
1.0
UNIT
V
V
ǺA
mV/
ǺS
/W
2002. 10. 9
Revision No : 1
1/2