E30A23VS_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
hAverage Forward Current : I_O=30A.
hZener Voltage : 23V(Typ.)
POLARITY
E30A23VS E30A23VR
(+ Type) (- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Reverse
Surge Current
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
I_F(AV)
I_FSM
RATING
30
300(50Hz)
UNIT
A
A
I_RSM
30
A
V_RSM
V_RM
T_j
T_stg
17
V
17
V
-40q190

-40q150

E30A23VS, E30A23VR
STACK SILICON DIFFUSED DIODE
A3
A2
D3
A1
E
F
G
DIM
A1
A2
A3
B1
B2
C1
C2
D1
MILLIMETERS
10.0 +_0.3
13.5 +_0.3
24.0 +_0.5
8.5 +_0.3
10.0 +_ 0.3
2.0 +_ 0.3
5.0 +_0.3
2.5+_ 0.3
DIM
D2
D3
E
F
G
H
T
MILLIMETERS
5.0 +_0.3
4.5+_ 0.3
1.9+_ 0.3
9.0 +_0.3
1.0+_ 0.3
4.4+_ 0.5
0.6+_ 0.3
MR
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
V_FM
Zener Voltage
V_Z
Repetitive Peak Reverse Current
Transient Thermal Resistance
Reverse Leakage Current
Under High Temperature
I_RRM
ǚV_F
HIR
Reverse Recovery Time
t_rr
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=V_RM
I_FM=100A
T_a=150, V_R=V_RM
I_F=100mA, -I_R=100mA,
90% Recovery Point
DC total junction to case
MIN.
-
20
-
-
-
TYP.
-
23
-
-
-
MAX.
1.2
26
10
100
2.5
UNIT
V
V
ǺA
mV
mA
-
-
1.5
ǺS
-
-
1.0
/W
2007. 6. 26
Revision No : 1
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