E30A23VPS_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – STACK SILICON DIFFUSED DIODE

SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E30A23VPS, E30A23VPR
STACK SILICON DIFFUSED DIODE
D
F2
FEATURES
hAverage Forward Current : I_O=30A.
hZener Voltage : 23V(Typ.)
POLARITY
E30A23VPS
(+ Type)
E30A23VPR
(- Type)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Reverse
Surge Current
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
I_F(AV)
I_FSM
I_RSM
V_RSM
V_RM
T_j
T_stg
RATING
30
300(50Hz)
30
17
17
-40q200
-40q200
UNIT
A
A
A
V
V


E
F1
A
DIM MILLIMETERS DIM MILLIMETERS
A Φ11.7+0.1/-0 F1
0.32
B 3.85+0/-0.2 F2
3.1
D Φ1.45+_ 0.1
G
0.5
E
1.55
L1 8.4 MAX
DIM TYPE POLARITY MILLIMETERS
L2 ^S
R
17.5+0/-1.5
21.5+0/-1.5
PF
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
Zener Voltage
Repetitive Peak Reverse Current
Transient Thermal Resistance
Reverse Leakage Current
Under High Temperature
V_FM
V_Z
I_RRM
ǚV_F
HIR
Temperature Resistance
R_th
TEST CONDITION
I_FM=100A
I_Z=10mA
V_R=V_RM
I_FM=100A
T_a=150, V_R=V_RM
DC total junction to case
MIN.
-
21
-
-
-
-
TYP.
-
23
-
-
-
-
MAX.
1.17
25
10
140
UNIT
V
V
ǺA
mV
2.5
mA
1.0
/W
2002. 10. 9
Revision No : 1
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