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BSS64 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistor
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
120
80
5
100
-100
200
150
-65ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
BSS64
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Type Name
U6
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
VBE(sat)
VCE(sat)
fT
Cob
TEST CONDITION
IC=4mA, IB=0
IC=100ỌA, IE=0
IE=100ỌA, IC=0
VCB=90V, IE=0
VCB=90V, IE=0, Ta=150á´±
VEB=5V, IC=0
VCE=1V, IC=1mA
VCE=1V, IC=4mA
VCE=1V, IC=10mA
VCE=1V, IC=20mA
IC=4mA, IB=0.4mA
IC=4mA, IB=0.4mA
IC=50mA, IB=15mA
VCE=10V, IC=4mA, f=100MHz
VCB=10V, IE=0, f=1MHz
1998. 6. 15
Revision No : 1
MIN.
80
120
5.0
-
-
-
-
20
-
-
-
-
-
60
-
TYP.
-
-
-
-
-
-
60
-
80
55
-
-
-
-
-
MAX.
-
-
-
100
50
200
-
-
-
-
1.2
0.15
0.2
-
5.0
UNIT
V
V
V
nA
ỌA
nA
V
V
MHz
pF
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