BFS20_99 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
BFS20/BF599
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BFS20
BF599
V_CBO
V_CEO
V_EBO
Collector Current
I_C
Emitter Current
I_E
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
40
25
4
5
25
-25
200
150
-65 150
UNIT
V
V
V
mA
mA
mW
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
V_(BR)CBO
V_(BR)CEO
Emitter-Base
Breakdown Voltage
BFS20
BF599
V_(BR)EBO
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
BFS20
BF599
BFS20
BF599
BFS20
BF599
I_CBO
h_FE
V_BE(ON)
f_T
C_ob
TEST CONDITION
I_C=10 A, I_E=0
I_C=2mA, I_B=0
I_E=10 A, I_C=0
V_CB=20V, I_E=0
V_CB=20V, I_E=0, Ta=150
V_CB=40V, I_E=0
V_CE=10V, I_C=7mA
V_CE=10V, I_C=7mA
V_CE=10V, I_C=7mA, f=100MHz
V_CB=10V, f=1MHz, I_E=0
MIN.
40
25
4
5
-
-
-
40
-
-
275
-
-
TYP.
-
-
-
-
-
-
-
750
750
550
550
0.35
MAX.
-
-
UNIT
V
V
-
V
100
nA
10
A
100
nA
-
-
900
mV
-
-
MHz
-
-
pF
MARK SPEC
TYPE
BFS20
BF599
MARK
G1
G2
Marking
Type Name
G1
Lot No.
G2 ^{Type Name}
Lot No.
1999. 11. 30
Revision No : 2
1/1