BF422 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER,COLOR TV CHROMA OUTPUT)

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : V_CEO>250V
Complementary to BF423.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Peak
Collector Power Dissipation
Base Current
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
I_B
T_j
Storage Temperature Range
T_stg
RATING
250
250
5
50
100
625
50
150
-65 150
UNIT
V
V
V
mA
mW
mA
BF422
SILICON NPN TRIPLE DIFFUSED TYPE
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Reverse Transfer Capacitance
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_re
TEST CONDITION
V_CB=200V, I_E=0
V_CB=200V, I_E=0, Tj=150
V_EB=5V, I_C=0
V_CE=20V, I_C=25mA
I_C=30mA, I_B=5mA
V_CE=-20V, I_C=25mA
V_CE=10V, I_C=10mA
V_CB=30V, I_E=0, f=1MHz
MIN.
-
-
-
50
-
-
60
-
TYP.
-
-
-
-
-
0.75
-
-
MAX. UNIT
10
nA
10
A
50
nA
-
-
0.6
V
-
V
-
MHz
1.6
pF
1998. 10. 31
Revision No : 2
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