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BF421_02 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON PNP TRIPLE DIFFUSED TYPE
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
FEATURES
High Voltage : VCEO>-300V
Complementary to BF420.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Peak
Collector Power Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
Base Current
IB
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-300
-300
-5
-50
-100
625
-50
150
-65 150
UNIT
V
V
V
mA
mW
mA
BF421
SILICON PNP TRIPLE DIFFUSED TYPE
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Reverse Transfer Capacitance
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cre
TEST CONDITION
VCB=-200V, IE=0
VCB=-200V, IE=0, Tj=150
VEB=-5V, IC=0
VCE=-20V, IC=-25mA
IC=-30mA, IB=-5mA
VCE=-20V, IC=-25mA
VCE=-10V, IC=-10mA
VCB=-30V, IE=0, f=1MHz
MIN.
-
-
-
50
-
-
60
-
TYP. MAX. UNIT
-
-10
nA
-
-10
A
-
-50
nA
-
-
-
-
-0.6
V
-0.75
-
V
-
-
MHz
-
1.6
pF
2002. 6. 25
Revision No : 3
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