BD135 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
High Current. (Max. : 1.5A)
Low Voltage (Max. : 45V)
DC Current Gain : h_FE=40Min. @I_C=0.15A
Complementary to BD136.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
45
45
5
1.5
0.5
1.25
10
150
-55 150
UNIT
V
V
V
A
A
W
BD135
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.5+_ 0.5
2.3+_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE (1)
h_FE (2)
h_FE (3)
V_CE(sat)
V_BE
f_T
TEST CONDITION
V_CB=30V, I_E=0
V_EB=5V, I_C=0
I_C=30mA, I_B=0
I_C=5mA, V_CE=2V
I_C=150mA, V_CE=2V
I_C=500mA, V_CE=2V
I_C=500mA, I_B=50mA
V_CE=2V, I_C=500mA
V_CE=5V, I_C=50mA
MIN.
-
-
45
25
40
25
-
-
-
TYP.
-
-
-
-
-
-
-
-
190
MAX.
0.1
10
-
-
250
-
0.5
1.0
-
UNIT
A
A
V
V
V
MHz
2003. 6. 16
Revision No : 0
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