BCX19_99 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
Super Mini Packaged Transistors for Hybrid Circuits.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CEO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
50
45
5
500
-500
200
150
-65 150
UNIT
V
V
V
mA
mA
mW
BCX19
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
U1 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
Collector Cut-off Current
I_CBO
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
h_FE
V_BE(ON)
V_CE(sat)
f_T
C_ob
TEST CONDITION
I_C=10mA, I_B=0
I_C=10 A, V_BE=0
I_E=10 A, I_C=0
V_CB=20V, I_E=0
Ta=150 , V_CB=20V, I_E=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=300mA
V_CE=1V, I_C=500mA
V_CE=1V, I_C=500mA
I_C=500mA, I_B=50mA
I_C=10mA, V_CE=5V, f=100MHz
V_CB=10V, f=1MHz
1999. 11. 30
Revision No : 2
MIN.
45
50
5.0
-
-
100
70
40
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
200
6.0
MAX.
-
-
-
100
5.0
600
-
-
1.2
0.62
-
-
UNIT
V
V
V
nA
A
V
V
MHz
pF
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