BCW29_99 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BCW31/32
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C *
T_j
-30
-20
-5
-100
350
150
Storage Temperature Range
T_stg
-65 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mW
BCW29/30
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
C1 ^{Type Name}
Lot No.
C2 ^{Type Name}
Lot No.
BCW29
BCW30
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
DC Current Gain
BCW29
h_FE
BCW30
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
V_CE(sat)
V_BE(ON)
C_ob
Noise Figure
NF
TEST CONDITION
I_C=-10 A
I_C=-2mA
I_E=-10 A
V_CB=-30V
V_EB=-5V
V_CE=-5V, I_C=-2mA
I_C=-10mA, I_B=-0.5mA
V_CE=-5V, I_C=-2mA
V_CB=-10V, I_E=0, f=1MHz
V_CE=-5V, I_C=-0.2mA
R_S=2k , f=1kHz
1999. 12. 29
Revision No : 1
MIN.
-30
-20
-5
-
-
110
200
-
-0.55
-
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-100
-100
220
450
-0.25
-0.7
4
UNIT
V
V
V
nA
nA
V
V
pF
-
-
10
dB
1/1