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BC849_99 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
BC849/850
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
For Complementary With PNP Type BC859/860.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
BC849
30
Collector-Base Voltage
VCBO
BC850
50
BC849
30
Collector-Emitter Voltage
VCEO
BC850
45
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VEBO
IC
PC *
Tj
Tstg
5
100
350
150
-55 150
PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter
BC849
Breakdown Voltage
BC850
Collector-Base
BC849
Breakdown Voltage
BC850
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
BC849
BC850
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE(Note)
VBE(ON) 1
VBE(ON) 2
VCE(sat) 1
VCE(sat) 2
VBE(sat) 1
VBE(sat) 2
fT
Cob
NF
Note : hFE Classification B:200 450, C:420 800
TEST CONDITION
IC=10mA, IB=0
IC=10 A, IE=0
IE=10 A, IC=0
VCB=30V, IE=0
IC=2mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz
IC=200 A, VCE=5V
Rg=10k , f=1kHz
Marking
MARK SPEC
TYPE
BC849B
MARK
2B
BC849C
2C
BC850B
2F
BC850C
2G
Type Name
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
MIN.
30
45
30
50
5
-
200
0.58
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
0.66
-
0.09
0.2
0.7
0.9
300
2.5
-
-
MAX.
-
-
-
-
-
15
800
0.7
0.77
0.25
0.6
-
-
-
4.5
4.0
1.0
UNIT
V
V
V
nA
V
V
V
MHz
pF
dB
Lot No.
1999. 11. 30
Revision No : 2
1/1