BC817W Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
V_CBO
V_CEO
V_EBO
I_C
I_E
50
45
5
500
-500
Collector Power Dissipation
P_C
100
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
UNIT
V
V
V
mA
mA
mW
BC817W
EPITAXIAL PLANAR NPN TRANSISTOR
E
M
B
2
1
N
K
M
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
3
D
0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H
0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
0.70
H
M
0.42
N
0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=20V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=500mA
I_C=500mA, I_B=50mA
V_CE=1V, I_C=500mA
V_CE=5V, I_C=10mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Note : h_FE(1) Classification 16:100 250 , 25:160 400 , 40:250 630
MARK SPEC
TYPE
MARK
BC817W-16
2M
BC817W-25
2N
BC817W-40
2R
Marking
Type Name
MIN.
-
-
100
40
-
-
100
-
TYP.
-
-
-
-
-
-
-
5
MAX.
0.1
0.1
630
-
0.7
1.2
-
-
UNIT
A
A
V
V
MHz
pF
Lot No.
2008. 9. 2
Revision No : 0
1/2