BC817A Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hComplementary to BC807A.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
50
V_CEO
45
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
500
Emitter Current
I_E
-500
Collector Power Dissipation
P_C*
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* : Package Mounted On 99.9% Alumina 10ƒ8ƒ0.6mm.
UNIT
V
V
V
mA
mA
mW


BC817A
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=20V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=500mA
I_C=500mA, I_B=50mA
V_CE=1V, I_C=500mA
V_CE=5V, I_C=10mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Note : h_FE(1) Classification 16:100q250 , 25:160q400 , 40:250q630
MIN.
-
-
100
40
-
-
100
-
TYP.
-
-
-
-
-
-
-
5
MAX.
0.1
0.1
630
-
0.7
1.2
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
MARK SPEC
TYPE
MARK
BC817A-16
2M
BC817A-25
2N
BC817A-40
2P
Marking
Type Name
Lot No.
2009. 2. 19
Revision No : 2
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