BC807_09 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – PNP GENERAL PURPOSE TRANSISTORS

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC817.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
V_CBO
V_CEO
V_EBO
I_C
I_E
-50
-45
-5
-800
800
Collector Power Dissipation
P_C*
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
UNIT
V
V
V
mA
mA
mW
BC807
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-20V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain (Note)
h_FE(1)
h_FE(2)
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-500mA
Collector-Emitter Saturation Voltage
V_CE(sat) I_C=-500mA, I_B=-50mA
Base-Emitter Voltage
V_BE
V_CE=-1V, I_C=-500mA
Transition Frequency
f_T
V_CE=-5V, I_C=-10mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification 16:100 250 , 25:160 400 , 40:250 630
MARK SPEC
TYPE.
MARK
BC807-16
5A
BC807-25
5B
BC807-40
5C
Marking
Type Name
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
UNIT
A
A
V
V
MHz
pF
Lot No.
2009. 2. 19
Revision No : 5
1/2