BC807W Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hComplementary to BC817W.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
-50
V_CEO
-45
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-500
Emitter Current
I_E
500
Collector Power Dissipation
P_C
100
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
UNIT
V
V
V
mA
mA
mW


BC807W
EPITAXIAL PLANAR PNP TRANSISTOR
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=-20V, I_E=0
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-500mA
I_C=-500mA, I_B=-50mA
V_CE=-1V, I_C=-500mA
V_CE=-5V, I_C=-10mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification 16:100q250 , 25:160q400 , 40:250q630
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
MARK SPEC
TYPE.
MARK
BC807W-16
1M
BC807W-25
1N
BC807W-40
1R
2008. 9. 2
Revision No : 0
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