BC807A Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hComplementary to BC817A.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
-50
V_CEO
-45
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-500
Emitter Current
I_E
500
Collector Power Dissipation
P_C*
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* : Package Mounted On 99.9% Alumina 10ƒ8ƒ0.6mm.
UNIT
V
V
V
mA
mA
mW


BC807A
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=-20V, I_E=0
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-500mA
I_C=-500mA, I_B=-50mA
V_CE=-1V, I_C=-500mA
V_CE=-5V, I_C=-10mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification 16:100q250 , 25:160q400 , 40:250q630
MARK SPEC
TYPE.
MARK
BC807A-16
1M
BC807A-25
1N
BC807A-40
1P
Marking
Type Name
MIN.
-
-
100
40
-
-
80
-
TYP.
-
-
-
-
-
-
-
9
MAX.
-0.1
-0.1
630
-
-0.7
-1.2
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
Lot No.
2009. 2. 19
Revision No : 2
1/2