BC637 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS)

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT TRANSISTORS.
FEATURES
ᴌComplementary to BC638.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
Storage Temperature
T_stg
RATING
60
60
5
500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mW
á´±
á´±
BC637
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Input Capacitance
I_CBO
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ib
Collector Output Capacitance
C_ob
* Pulse Test : Pulse Widthᴪ300ỌS, Duty Cycle 2.0%
TEST CONDITION
V_CB=30V, I_E=0
I_C=10mA, I_B=0
I_C=100ỌA, I_E=0
I_E=10ỌA, I_C=0
V_CE=2V, I_C=150mA
I_C=500mA, I_B=50mA
V_CE=2V, I_C=500mA
V_CE=2V, I_C=50mA, f=100MHz
V_EB=0.5V, I_C=0, f=1MHz
V_CB=10V, I_E=0, f=1MHz
MIN.
-
60
60
5.0
40
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
200
50
7.0
MAX.
100
-
-
-
160
0.5
1.0
-
-
-
UNIT
nA
V
V
V
V
V
MHz
pF
pF
2000. 10. 2
Revision No : 0
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