BC559 Datasheet, PDF (1/1 Pages) Motorola, Inc – Low Noise Transistors

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE APPLICATION.
FEATURE
hFor Complementary with NPN Type BC549/550.
BC559/560
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
BC559
BC560
BC559
Collector-Emitter Voltage
BC560
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
-30
-50
-30
-45
-5
-100
625
150
-55q150
UNIT
V
V
V
mA
mW


K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter
Breakdown Voltage
BC559
BC560
V_(BR)CEO I_C=-10mA, I_B=0
Collector-Base
Breakdown Voltage
BC559
BC560
V_(BR)CBO I_C=-10ǺA, I_E=0
Emitter-Base Breakdown Voltage
V_(BR)EBO I_E=-10ǺA, I_C=0
Collector Cut-off Current
I_CBO
V_CB=-30V, I_E=0
DC Current Gain
h_FE
I_C=-2mA, V_CE=-5V
Base-Emitter Voltage
V_BE(ON) I_C=-2mA, V_CE=-5V
Collector-Emitter Saturation Voltage
V_CE(sat) I_C=-100mA, I_B=-5mA
Base-Emitter Saturation Voltage
V_BE(sat) I_C=-100mA, I_B=-5mA
Transition Frequency
f_T
I_C=-10mA, V_CE=-5V, f=100MHz
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Noise Figure
NF
I_C=-200ǺA, V_CE=-5V
Rg=10kʃ, f=1kHz
Note : h_FE Classification A:110q220, B:200q450, C:420q800
MIN.
-30
-45
-30
-50
-5.0
-
110
-0.55
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-0.9
300
-
MAX.
-
-
-
-
-
-15
800
-0.7
-0.6
-
-
7.0
UNIT
V
V
V
nA
V
V
V
MHz
pF
-
-
4.0
dB
1999. 11. 30
Revision No : 2
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