BC549_99 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
For Complementary with PNP Type BC559/560.
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
BC549
BC550
Collector-Emitter Voltage
BC549
BC550
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
30
50
30
45
5
100
625
150
-55 150
UNIT
V
V
V
mA
mW
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter
Breakdown Voltage
BC549
BC550
V_(BR)CEO I_C=10mA, I_B=0
Collector-Base
Breakdown Voltage
BC549
BC550
V_(BR)CBO I_C=10 A, I_E=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
BC549
BC550
V_(BR)EBO
I_CBO
h_FE(Note)
V_BE(ON)
V_CE(sat)
V_BE(sat)
f_T
C_ob
NF
I_E=10 A, I_C=0
V_CB=30V, I_E=0
I_C=2mA, V_CE=5V
I_C=2mA, V_CE=5V
I_C=100mA, I_B=5mA
I_C=100mA, I_B=5mA
I_C=10mA, V_CE=5V, f=100MHz
V_CB=10V, I_E=0, f=1MHz
I_C=200 A, V_CE=5V
Rg=10k , f=1kHz
Note : h_FE Classification A:110 220, B:200 450, C:420 800
MIN.
30
45
30
50
5.0
-
110
0.55
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
0.9
300
-
-
-
MAX.
-
-
-
-
-
15
800
0.7
0.6
-
-
4.5
4.0
10
UNIT
V
V
V
nA
V
V
V
MHz
pF
dB
1999. 11. 30
Revision No : 2
1/1