BC549_550 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
hFor Complementary with PNP Type BC559/560.
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
BC549
BC550
BC549
Collector-Emitter Voltage
BC550
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
30
50
30
45
5
100
625
150
-55q150
UNIT
V
V
V
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector-Emitter
Breakdown Voltage
BC549
BC550
V_(BR)CEO I_C=10mA, I_B=0
Collector-Base
Breakdown Voltage
BC549
BC550
V_(BR)CBO I_C=10ǺA, I_E=0
Emitter-Base Breakdown Voltage
V_(BR)EBO I_E=10ǺA, I_C=0
Collector Cut-off Current
I_CBO
V_CB=30V, I_E=0
DC Current Gain
h_FE(Note) I_C=2mA, V_CE=5V
Base-Emitter Voltage
V_BE(ON) I_C=2mA, V_CE=5V
Collector-Emitter Saturation Voltage
V_CE(sat) I_C=100mA, I_B=5mA
Base-Emitter Saturation Voltage
V_BE(sat) I_C=100mA, I_B=5mA
Transition Frequency
f_T
I_C=10mA, V_CE=5V, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Noise Figure
BC549
BC550
NF
I_C=200ǺA, V_CE=5V
Rg=10kʃ, f=1kHz
Note : h_FE Classification A:110q220, B:200q450, C:420q800
MIN.
30
45
30
50
5.0
-
110
0.55
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
0.9
300
-
-
-
MAX.
-
-
-
-
-
15
800
0.7
0.6
-
-
4.5
4.0
10
UNIT
V
V
V
nA
V
V
V
MHz
pF
dB
1999. 11. 30
Revision No : 2
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