BC517_99 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR.
BC517
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
40
30
10
500
625
150
-55 150
UNIT
V
V
V
mA
mW
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
I_C=0.1mA, I_E=0
I_C=10mA, I_B=0
I_E=1.0mA, I_C=0
V_CB=40V, I_E=0
V_EB=10V, I_C=0
I_C=100mA, V_CE=2V
I_C=100mA, I_B=1mA
I_C=100mA, I_B=1mA
I_C=100mA, V_CE=2V, f=100MHz
V_CB=10V, f=1MHz, I_E=0
MIN.
40
30
10
-
-
30k
-
-
-
-
TYP.
-
-
-
-
-
-
-
1.5
220
5.0
MAX.
-
-
-
1.0
1.0
-
1.0
2.0
-
-
UNIT
V
V
V
A
A
V
V
MHz
pF
1999. 11. 30
Revision No : 1
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