BC337_00 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
High Current : I_C=800mA.
DC Current Gain : h_FE=100 630 (V_CE=1V, I_c=100mA).
For Complementary with PNP type BC327.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
50
45
5
800
-800
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
BC337
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. COLLECTOR
2. BASE
3. EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
h_FE
V_CE(sat)
V_BE(ON)
f_T
V_CB=45V, I_E=0
V_CE=1V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=1V, I_C=300mA
V_CE=5V, I_C=10mA, f=100MHz
Collector Output Capacitance
C_ob
V_CB=10V, f=1MHz, I_E=0
Note : h_FE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630
MIN.
-
100
-
-
-
-
TYP.
-
-
-
-
100
16
MAX.
100
630
0.7
1.2
-
-
UNIT
nA
V
V
MHz
pF
2000. 2. 28
Revision No : 2
1/2