BAW56T Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: V_F=0.92V (Typ.).
Fast Reverse Recovery Time : t_rr=1.6ns(Typ.).
Small Total Capacitance : C_T=2.2pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
V_RM
85
Reverse Voltage
V_R
80
Continuous Forward Current
I_F
150
Surge Current (10ms)
I_FSM
2
Power Dissipation
P_D
200 *
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT
V
V
mA
A
mW
BAW56T
SILICON EPITAXIAL TYPE DIODE
E
B
2
1
3
DIM MILLIMETERS
A
1.60+_ 0.10
D
B
0.85+_ 0.10
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. CATHODE 1
2. CATHODE 2
3. ANODE
3
2
1
ESM
Marking
H1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=150mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
-
-
-
-
MAX.
-
-
1.25
0.5
4.0
4.0
UNIT
V
A
pF
ns
2009. 1. 23
Revision No : 1
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