BAV99C_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
hSmall Package : SOT-23(1).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
V_R
80
Continuous Forward Current
I_F
100
Surge Current (10ms)
I_FSM
1
Power Dissipation
P_D
225*
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* Note1 : Package Mounted On FR-5 Board (25.4ƒ19.05ƒ1.57mm)
UNIT
V
mA
A
mW


BAV99C
SILICON EPITAXIAL PLANAR DIODE
E
L BL
2
3
1
M
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
DIM MILLIMETERS
A
2.90+_ 0.1
B 1.30+0.20/-0.15
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G
1.90
J
0.10
K
0.00 ~ 0.10
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
3
2
1
SOT-23(1)
Marking
Type Name
H8C
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V_R
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
TEST CONDITION
I_R=100uA
I_F=1mA
I_F=10mA
I_F=150mA
V_R=80V
V_R=0, f=1MHz
MIN.
80
-
-
-
-
-
TYP.
-
0.61
0.74
-
-
-
MAX.
-
0.65
0.8
1.25
0.5
4
UNIT
V
V
ǺA
pF
2015. 5. 12
Revision No : 0
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