BAV70_15 Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES
hSmall Package : SOT-23.
hLow Forward Voltag : V_F=0.9V(Typ.).
hFast Reverse Recovery Time : t_rr=1.6ns(Typ.).
hSmall Total Capacitance : C_T=0.9pF(Typ.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
V_RM
85
V_R
80
I_F
250
I_FSM
2
225*
P_D
300**
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
* Note1 : Package Mounted On FR-5 Board (25.4ƒ19.05ƒ1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10ƒ8ƒ0.6mm)
UNIT
V
V
mA
A
mW


BAV70
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. ANODE 1
2. ANODE 2
3. CATHODE
3
2
1
SOT-23
Marking
Type Name
H7
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
t_rr
TEST CONDITION
I_F=1mA
I_F=10mA
I_F=150mA
V_R=80V
V_R=0, f=1MHz
I_F=10mA
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
-
-
-
-
MAX.
-
-
1.25
0.5
3.0
4.0
UNIT
V
ǺA
pF
nS
2009. 1. 23
Revision No : 1
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