BAV70C_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES
hSmall Package : SOT-23(1).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage
Continuous Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
V_R
80
I_F
100
I_FSM
1
P_D
225*
T_j
150
T_stg
-55q150
* Note1 : Package Mounted On FR-5 Board (25.4ƒ19.05ƒ1.57mm)
UNIT
V
mA
A
mW


BAV70C
SILICON EPITAXIAL PLANAR DIODE
E
L BL
2
3
1
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM MILLIMETERS
A
2.90+_ 0.1
B 1.30+0.20/-0.15
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G
1.90
J
0.10
K
0.00 ~ 0.10
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
3
2
1
SOT-23(1)
Marking
Type Name
H7C
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
V_R
V_F(1)
V_F(2)
V_F(3)
I_R
C_T
TEST CONDITION
I_R=100uA
I_F=1mA
I_F=10mA
I_F=100mA
V_R=80V
V_R=0, f=1MHz
MIN.
80
-
-
-
-
-
TYP.
-
0.59
0.72
-
-
2
MAX.
-
0.65
0.8
1.0
1
3
UNIT
V
V
ǺA
pF
2015. 5. 12
Revision No : 0
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