BAV23C Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
Low Leakage Current.
Repetitive Peak Reverse Voltage : V_RRM 250V.
Low Capacitance : C_T 2pF.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
V_RM
250
Reverse Voltage
V_R
200
Maximum (Peak) Forward Current
I_FM
625
Single diode loaded.
225
Forward Current
I_F
Double diode loaded.
125
Surge Current
(Square wave)
t=1 s
t = 100 s
t = 10ms
9
I_FSM
3
1.7
Power Dissipation
P_D
250*
Junction Temperature
T_j
150
Storage Temperature Range
T_{stg -55 150}
Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)
UNIT
V
V
mA
mA
A
A
A
mW
BAV23C
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
Type Name
U4
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
Reverse Current
I_R
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=100mA
I_F=200mA
V_R=200V
V_R=200V, T_j=150
V_R=0V, f=1MHz
I_F=10mA, I_R=10mA, I_RM=1mA
MIN.
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
1.0
1.25
0.1
100
2
50
UNIT
V
A
pF
ns
2009. 5. 15
Revision No : 1
1/2