BAS23W_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SILICON EPITAXIAL PLANAR DIODE

SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
hHigh Reliability.
hSmall surface mounting type (USM).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
V_RM
300
V_R
250
Continuous Forward Current
I_F
200
Surge Current (10mS)
I_FSM
2
Power Dissipation
P_D
200 *
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Note : * Package Mounted On FR-5 Board (25.4ƒ19.05ƒ1.57mm)
UNIT
V
V
mA
A
mW


BAS23W
SILICON EPITAXIAL PLANAR DIODE
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
NK
N
N
0.10 MIN
P
0.1 MAX
1. CATHODE 1
2. ANODE 2
3. ANODE 1/ CATHODE 2
3
2
1
USM
Marking
Type Name
JE
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
I_R(1)
Reverse Current
I_R(2)
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=150mA
V_R=250V
V_R=300V
V_R=0V, f=1MHz
I_R=30mA, I_F=30mA
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX.
1.25
0.2
100
3
100
UNIT
ǺA
pF
nS
2009. 1. 23
Revision No : 2
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