BAS21 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT DIODE

SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (SOT-23).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
Reverse Voltage
Continuous Forward Current
Surge Current (10mS)
V_RM
300
V
V_R
250
V
I_F
250
mA
I_FSM
2
A
Power Dissipation
250*
P_D
mW
300**
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
BAS21
SILICON EPITAXIAL PLANAR DIODE
E
L
B
L
2
3
1
P
P
M
1. NC
2. ANODE
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
2
1
SOT-23
Marking
H 9 ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
V_F
I_R(1)
Reverse Current
I_R(2)
Total Capacitance
C_T
Reverse Recovery Time
t_rr
TEST CONDITION
I_F=150mA
V_R=250V
V_R=300V
V_R=0V, f=1MHz
I_R=30mA, I_F=30mA
MIN.
-
-
-
-
-
TYP.
-
-
-
-
-
MAX.
1.25
0.2
100
3
100
UNIT
V
A
pF
nS
2009. 1. 23
Revision No : 1
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