2N7002KU Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N Channel MOSFET

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
hESD Protected 2000V.(Human Body Model)
hHigh density cell design for low R_DS(ON).
hVoltage controlled small signal switch.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed ^{(Note 1)}
Drain Power Dissipation ^{(Note 2)}
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient ^{(Note 2)}
Note 1) Pulse Width∔10ɫ, Duty Cycle∔1%
Note 2) Surface Mounted on 2 ƒ2 FR4 Board
V_DSS
V_GSS
I_D
I_DP
P_D
T_j
T_stg
R_thJA
60
V
‚20
V
300
mA
1000
270
mW
150

-55q150 
460 /W
2N7002KU
N Channel MOSFET
E
M
B
2
1
N
K
M
DIM MILLIMETERS
DA
B
2.00+_ 0.20
1.25+_ 0.15
C
0.90+_ 0.10
3
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
0.70
H
M
0.42
N
0.10 MIN
N
1. SOURCE
2. GATE
3. DRAIN
USM
EQUIVALENT CIRCUIT
D
G
S
Marking
KU ^{Type Name}
Lot No.
2013. 7. 19
Revision No : 1
1/4