2N7002KE Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N Channel MOSFET

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
hESD Protected 2000V.(Human Body Model)
hHigh density cell design for low R_DS(ON).
hVoltage controlled small signal switch.
hHigh-speed line driver.
hLow-side loadswitch.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed ^{(Note 1)}
Drain Power Dissipation ^{(Note 2)}
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient ^{(Note 2)}
Note 1) Pulse Width∔10ɫ, Duty Cycle∔1%
Note 2) Surface Mounted on 2 ƒ2 FR4 Board
V_DSS
V_GSS
I_D
I_DP
P_D
T_j
T_stg
R_thJA
RATING
60
‚20
300
1000
300
150
-55q150
416
UNIT
V
V
mA
mW


/W
2N7002KE
N Channel MOSFET
E
B
D
2
DIM MILLIMETERS
1
3
A
1.60+_ 0.20
B
0.85+_ 0.10
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
J
0.13+_ 0.05
1. SOURCE
2. GATE
3. DRAIN
ESM
EQUIVALENT CIRCUIT
D
G
Marking
Type Name
KE
S
2013. 7. 19
Revision No : 1
1/4