2N7002KDU Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N Channel MOSFET ESD Protected 2000V

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
hESD Protected 2000V.
hHigh density cell design for low R_DS(ON).
hVoltage controlled small signal switch.
hRugged and reliable.
hHigh saturation current capablity.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed ^{(Note 1)}
Drain Power Dissipation ^{(Note 2)}
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient ^{(Note 2)}
Note 1) Pulse Width∔10ɫ, Duty Cycle∔1%
Note 2) Surface Mounted on 2 ƒ2 FR4 Board
V_DSS
V_GSS
I_D
I_DP
P_D
T_j
T_stg
R_thJA
60
‚20
300
1200
270
150
-55q150
460
UNIT
V
V
mA
mW


/W
2N7002KDU
N Channel MOSFET
ESD Protected 2000V
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q₁ SOURCE
2. Q₁ GATE
3. Q₂ DRAIN
4. Q₂ SOURCE
5. Q₂ GATE
6. Q₁ DRAIN
US6
EQUIVALENT CIRCUIT
6
5
4
1
2
3
Marking
6
5
4
DU ^{Type Name}
Lot No.
1
2
3
2013. 7. 19
Revision No : 1
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