2N7002KA Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel TrenchMOS FET

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
hESD Protected 2000V.
hHigh density cell design for low R_DS(ON).
hVoltage controlled small signal switch.
hRugged and reliable.
hHigh saturation current capablity.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
V_DSS
60
Gate-Source Voltage
V_GSS
‚20
Continuous
I_D
Drain Current
Pulsed (Note 1)
I_DP
300
1200
Drain Power Dissipation (Note 2)
P_D
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Note 1) Pulse Width†10ɫ, Duty Cycle†1%
Note 2) Package mounted on 99% Alumina 10ƒ8ƒ0.6mm
UNIT
V
V
mA
mW


EQUIVALENT CIRCUIT
D
G
2N7002KA
N Channel MOSFET
ESD Protected 2000V
E
L
B
L
2
3
1
P
P
M
1. SOURCE
2. GATE
3. DRAIN
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
Type Name
2P
Lot No.
S
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
BV_DSS
I_DSS
I_GSSF
I_GSSR
V_GS=0V, I_D=10ǺA
V_DS=60V, V_GS=0V
V_GS=20V, V_DS=0V
V_GS=-20V, V_DS=0V
ESD-Capability*
C=100pF, R=1.5Kʃ
-
Both forward and reverse
direction 3 pulse
*Failure cirterion : I_DSS > 1ǺA at V_DS=60V, I_GSSF>10ǺA at V_GS=20V, I_GSSR>-10ǺA at V_GS=-20V.
2011. 4. 4
Revision No : 1
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
10
-10
UNIT
V
ǺA
ǺA
ǺA
2000
-
-
V
1/3