2N7002A_13 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
hHigh density cell design for low R_DS(ON).
hVoltage controlled small signal switch.
hRugged and reliable.
hHigh saturation current capablity.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (R_GS†1ʅ)
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_j
T_stg
RATING
60
60
‚20
115
800
200
150
-55q150
UNIT
V
V
V
mA
mW


2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
EQUIVALENT CIRCUIT
Marking
WB ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV_DSS
I_DSS
I_GSSF
I_GSSR
TEST CONDITION
V_GS=0V, I_D=10ǺA
V_DS=60V, V_GS=0V
V_GS=20V, V_DS=0V
V_GS=-20V, V_DS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
1
-1
UNIT
V
ǺA
ǺA
ǺA
2009. 11. 17
Revision No : 8
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